document number: 81958 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.0, 02-dec-08 1 optocoupler, phototransistor output, with base connection in soic-8 package vo211at, vo212at, VO213AT vishay semiconductors description the vo211at, vo212at, VO213AT are optically coupled pairs with a gallium arsenide infrared led and silicon npn phototransistor. signal information, including a dc level, can be transmitted by the device while maintaining a high degree of electrical isolatio n between input and output. the vo211at, vo212at, vo213 at comes in a standard soic-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. features ? isolation test voltage, 4000 v rms ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ? ul1577, file no. e52744 system code y ? cul - file no. e52744, equivalent to csa bulletin 5a ? din en 60747-5-5 (vde 0884) available with option 1 note t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximu m ratings can cause permanent damage to the device. functional operation of the device is not implied at these or any other c onditions in excess of t hose given in the operational sections of this document. exposure to absolute ma ximum ratings for extended periods of the time can adversely affect reliability. i179002 1 2 3 4 a k n c n c 8 7 6 5 n c b c e order information part remarks vo211at ctr > 20 %, soic-8 vo212at ctr > 50 %, soic-8 VO213AT ctr > 100 %, soic-8 absolute maximum ratings parameter test condition symbol value unit input peak reverse voltage v r 6v peak forward current 1 s, 300 pps i fm 1a forward continuous current i f 60 ma power dissipation p diss 90 mw derate linearly from 25 c 1.2 mw/c output collector emitter breakdown voltage bv ceo 30 v emitter collector breakdown voltage bv eco 7v collector base breakdown voltage bv cbo 70 v i cmax. dc i cmax. dc 50 ma i cmax. t < 1 ms i cmax. 100 ma power dissipation p diss 150 mw derate linearly from 25 c 2mw/c coupler isolation test voltage v iso 4000 v rms total package dissipation led and detector p tot 240 mw derate linearly from 25 c 3.2 mw/c storage temperature t stg - 40 to + 150 c operating temperature t amb - 40 to + 100 c soldering time at 260 c t sld 10 s
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 81958 2 rev. 1.0, 02-dec-08 vo211at, vo212at, VO213AT vishay semiconductors optocoupler, phototransistor output, with base connection in soic-8 package note t amb = 25 c, unless otherwise specified. minimum and maximum values were tested requierements. typical val ues are characteristic s of the device and are the result of en gineering evaluations. typical values are for information only and are not part of the testing requirements. electrical characteristcs parameter test condition part symbol min. typ. max. unit input forward voltage i f = 10 ma v f 1.3 1.5 v reverse current v r = 6 v i r 0.1 100 a capacitance v r = 0 v c o 13 pf output collector emitter breakdown voltage i c = 100 a bv ceo 30 v emitter collector breakdown voltage i e = 10 a bv eco 7v collector base breakdown voltage i c = 100 a bv cbo 100 v collector base current i cbo 1na emitter base current i ebo 1na collector dark current v ce = 10 v i ceo 550na collector emitter capacitance v ce = 0 v c ce 10 pf saturation voltage, collector emitter i f = 10 ma v cesat 0.4 v coupler isolation test voltage 1 s v iso 4000 v rms current transfer ratio parameter test condition part symbol min. typ. max. unit current transfer ratio i f = 10 ma, v ce = 5 v vo211at ctr 20 50 % vo212at ctr 50 80 % VO213AT ctr 100 130 %
document number: 81958 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.0, 02-dec-08 3 vo211at, vo212at, VO213AT optocoupler, phototransistor output, with base connection in soic-8 package vishay semiconductors fig. 1 - switching test circuit fig. 2 - test circuit for common mode transient immunity switching characteristics parameter test condition part symbol min. typ. max. unit turn-on time i c = 2 ma, r l = 100 , v cc = 10 v t on 3s turn-off time i c = 2 ma, r l = 100 , v cc = 10 v t off 3s rise time i c = 2 ma, r l = 100 , v cc = 10 v t r 3s fall time i c = 2 ma, r l = 100 , v cc = 10 v t f 2s common mode transient immunity parameter test condition symbol min. typ. max. unit common mode transient immunity at logic high v cm = 1000 v p-p , r l = 1 k , i f = 0 ma |c mh | 5000 v/s common mode transient immunity at logic low v cm = 1000 v p-p , r l = 1 k , i f = 10 ma |c ml | 5000 v/s iil215at_17 v cc = 5 v inp u t v out r l t fall 10 % 50 % 90 % t off t on t rise o u tp u t inp u t 10 % 50 % 90 % v 0 0 r f v b = 4.5 v 2, 3, 4 1 b a 7 6 5 r l 1 k v o 5 v dc 0.1 f v cm inp u t from h v p u lse so u rce + - 21627 dt dt d v = 63 % of v cm d v = 63 % of v cm common mode v oltage v cm 2.0 v 2.0 v v o v o cm h cm l 0. 8 v 0. 8 v time 21626
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 81958 4 rev. 1.0, 02-dec-08 vo211at, vo212at, VO213AT vishay semiconductors optocoupler, phototransistor output, with base connection in soic-8 package note as per iec 60747-5-2, 7.4.3.8.1, this optocoupler is suitable fo r ?safe electrical insulation? only within the safety ratings . compliance with the safety ratings shall be ensured by means of protective circuits. typical characteristics t amb = 25 c, unless otherwise specified fig. 3 - forward voltage vs. forward current fig. 4 - normalized non-saturated and saturated ctr ce vs. led current safety and insulation ratings parameter test condition symbol min. typ. max. unit climatic classification (according to iec 68 part 1) 40/100/21 polution degree 2 comparative tracking index cti 175 399 isolation test voltage 1 s v iso 4000 v rms peak transient overvoltage v iotm 6000 v peak insulation voltage v iorm 560 v resistance (input to output) r io 100 g safety rating - power output p so 350 mw safety rating - input current i si 150 ma safety rating - temperature t si 165 c external creepage distance 4 mm external clearance distance 4 mm internal creepage distance 3.3 mm insulation thickness 0.2 mm iil211at_01 i f - for w ard c u rrent (ma) 100 10 1 0.1 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 v f - for w ard v oltage ( v ) t = - 55 c t = 25 c t = 100 c a a a iil211at_02 0.1 10 100 n ormalized to: v ce = 10 v i f = 10 ma t a = 25 c 1.5 1.0 0.5 0.0 v ce = 5 v v ce = 0.4 v i f - led c u rrent (ma) n ctr ce - n ormalized (ctr ) ce 1
document number: 81958 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.0, 02-dec-08 5 vo211at, vo212at, VO213AT optocoupler, phototransistor output, with base connection in soic-8 package vishay semiconductors fig. 5 - collector emitte r current vs. led current fig. 6 - normalized collector ba se photocurrent vs. led current fig. 7 - normalized collector ba se photocurrent vs. led current fig. 8 - collector base photocurrent vs. led current fig. 9 - collector emitter le akage current vs. temperature fig. 10 - normalized saturated h fe vs. base current and temperature iil211at_03 0.1 1 10 100 i f - led c u rrent (ma) i ce - collector emitter c u rrent (ma) t a = 25 c v ce = 0.4 v v ce = 10 v 150 100 50 0 iil211at_04 0.1 1 10 100 i f - led c u rrent (ma) n i cb - n ormalized i cb n ormalized to: v cb = 9.3 v i f = 1 ma t a = 25 c 100 10 1 0.1 iil211at_05 0.1 1 10 100 i f - led c u rrent (ma) n i cb - n ormalized (i ) cb n ormalized to: v cb = 9.3 v i f = 10 ma t a = 25 c 10 1 0.1 0.01 iil211at_06 i f - led c u rrent (ma) i cb - collector base c u rrent ( a) t a = 25 c v cb = 9.3 v 1000 100 10 1 0.1 0.1 1 10 100 iil211at_07 t am b - am b ient temperat u re (c) i ceo - collector emitter (na) 10 5 10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 - 20 0 20 40 60 8 0 100 v ce = 10 v typical iil211at_0 8 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 25 c 50 c 70 c i b - base c u rrent ( a) n hfe(sat) - n ormalized sat u rated h fe v = 0.4 v i b = 20 a v = 10 v t = 25 c n ormalized to: ce ce a
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 81958 6 rev. 1.0, 02-dec-08 vo211at, vo212at, VO213AT vishay semiconductors optocoupler, phototransistor output, with base connection in soic-8 package fig. 11 - typical switching characteristics vs. base resistance (saturated operation) fig. 12 - typical switching times vs.load resistance package dimensions in inches (millimeters) iil211at_09 100 50 10 5 1.0 base emitter resistancs, r be ( ) s w itching time ( s) 10 k 50 k 100 k 500 k 1 m i f = 10 ma p u lse w idth = 100 ms d u ty cycle = 50 % inp u t: t off t o n iil211at_10 1000 500 100 50 10 5 1 0.1 0.5 1 5 10 50 100 inp u t: i f = 10 ma p u lse w ith = 100 ms d u ty cycle = 50 % load resistance r l (k ) s w itching time ( s) t off t o n i17 8 003 40 7 pin one id 5 max. iso method a 0.036 (0.91) 0.014 (0.36) 0.170 (4.32) 0.045 (1.14) 0.260 (6.6) r 0.010 (0.13) 0.050 (1.27) 0.240 (6.10) 0.050 (1.27) typ. 0.016 (0.41) 0.004 (0.10) 0.00 8 (0.20) lead coplanarity 0.0015 (0.04) max. 0.00 8 (0.20) 0.120 0.005 (3.05 0.13) c l r 0.010 (0.25) max. 0.021 (0.53) 0.154 0.005 (3.91 0.13) 0.015 0.002 (0.3 8 0.05) 0.192 0.005 (4. 88 0.13) 0.020 0.004 (0.51 0.10) 2 places 0.05 8 0.005 (1.49 0.13) 0.125 0.005 (3.1 8 0.13)
document number: 81958 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.0, 02-dec-08 7 vo211at, vo212at, VO213AT optocoupler, phototransistor output, with base connection in soic-8 package vishay semiconductors ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve t he performance of our products, processes, distribution and o perating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances in to the atmosphere whic h are known as ozone depleting substances (odss). the montreal protocol (1987) a nd its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. vari ous national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of co ntinuous improvements to elim inate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify t hat our semiconductors are not manufactured with ozone dep leting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating para meters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, dam ages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death as sociated with such unint ended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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